Microcavities in Semiconductor Materials

Microcavities in Semiconductor Materials

Positron beam and helium desorption techniques have been applied to different materials, in particular semiconductor materials, to determine the presence of defects. The positron technique yields values of the positron diffusion length and values of the Doppler broadening parameters. In principle, defect concentrations can be derived and an indication can be obtained about the nature of the def...

Twin polaritons in semiconductor microcavities

Polariton interactions in semiconductor microcavities

Mots-clés : Exciton Polariton Microcavité Spectroscopie Semiconducteur Interaction In this review, we will try to summarize the results that we have obtained on the measurement of polariton interactions. We will describe here the samples, the experimental systems and some of the important results. We will also give a few highlights on the theoretical description of these results. One of the mai...

Multivalley engineering in semiconductor microcavities

We consider exciton-photon coupling in semiconductor microcavities in which separate periodic potentials have been embedded for excitons and photons. We show theoretically that this system supports degenerate ground-states appearing at non-zero inplane momenta, corresponding to multiple valleys in reciprocal space, which are further separated in polarization corresponding to a polarization-vall...

Optical parametric oscillaton in 1D semiconductor microcavities

We present an experimental investigation of parametric scattering processes and optical parametric oscillations in wire shaped, one-dimensional semiconductor microcavities. Far field emission patterns and corresponding band dispersion are studied by polarization resolved measurements and power dependence measurements under resonant and non-resonant excitation. The multiplicity of the photonic b...